inchange semiconductor isc product specification isc silicon npn power transistor MJH16018 description collector-emitter voltage- : v ceo(sus) = 800v(min) fast turn-off time applications designed for high-voltage, high-speed , power switching in inductive circuits where fall time is critical. they are particu- larly suited for line operated switchmode applications as: switching regulators inverters solenoids relay drivers motor controls deflection circuits absolute maximum ratings(t a =25 ) symbol parameter value unit v cev collector-emitter voltage 1500 v v ceo(sus) collector-emitter voltage 800 v v ebo emitter-base voltage 6 v i c collector current-continuous 10 a i cm collector current-peak 15 a i b b base current-continuous 8 a i bm base current-peak 12 a collector power dissipation @t c =25 150 p c collector power dissipation @t c =100 50 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r (th)j-c thermal resistance,junction to case 1.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor MJH16018 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 50ma; i b = 0 800 v v ce (sat)-1 collector-emitter saturation voltage i c = 5a ;i b = 1a i c = 5a ;i b = 1a ;t c =100 1.5 2.0 v v ce (sat)-2 collector-emitter saturation voltage i c = 10a ;i b = 4a 1.5 v v be (sat) base-emitter saturation voltage i c = 5a ;i b = 1a i c = 5a ;i b = 1a ;t c =100 1.5 1.5 v i cev collector cutoff current v cev =1500v,v be(off) =1.5v v cev =1500v,v be(off) =1.5v;t c =100 0.25 1.5 ma i cer collector cutoff current v ce =1500v;r be =50 ;t c =100 2.5 ma i ebo emitter cutoff current v eb = 6v; i c = 0 1.0 ma h fe dc current gain i c = 5a ; v ce = 5v 7 c ob output capacitance i e = 0; f= 1khz ; v cb = 10v 400 pf switching times; resistive load t d delay time 0.05 0.1 s t r rise time 0.3 0.4 s t s storage time 2 3 s t f fall time i c =5a; i b1 = 1a;i b2 = -2a; v cc = 250v ,r b2 = 3 ; pw=30 s duty cycle 2% 0.9 1.2 s isc website www.iscsemi.cn
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